HIGH-EFFICIENCY, CONTINUOUS-WAVE, EPITAXIAL SURFACE-EMITTING LASER WITH PSEUDOMORPHIC INGAAS QUANTUM WELLS

被引：23

作者：

GOURLEY, PL

LYO, SK

DAWSON, LR

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 15期

关键词：

D O I：

10.1063/1.100678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1397 / 1399

页数：3

共 14 条

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[3]

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[8] REPRODUCIBLE FABRICATION OF ALGAAS/GAAS CIRCULAR BURIED HETEROSTRUCTURE (CBH) SURFACE-EMITTING LASERS WITH LOW THRESHOLDS [J].

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IGA, K .

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[9]

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[10] SURFACE-EMITTING LASER DIODE WITH VERTICAL GAAS GAALAS QUARTER-WAVELENGTH MULTILAYERS AND LATERAL BURIED HETEROSTRUCTURE [J].

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HSIN, W ;

WU, MC ;

WANG, S ;

WHINNERY, JR ;

WANG, SC ;

YANG, JJ .

APPLIED PHYSICS LETTERS, 1987, 51 (21) :1655-1657

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