SURFACE-EMITTING LASER DIODE WITH VERTICAL GAAS GAALAS QUARTER-WAVELENGTH MULTILAYERS AND LATERAL BURIED HETEROSTRUCTURE

被引：46

作者：

OGURA, M

HSIN, W

WU, MC

WANG, S

WHINNERY, JR

WANG, SC

YANG, JJ

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

[2] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

[3] LOCKHEED MISSILES & SPACE CO INC,DIV RES & DEV,PALO ALTO,CA 94304

[4] TRW,SPACE & TECH GRP,REDONDO BEACH,CA 90278

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 21期

关键词：

D O I：

10.1063/1.98586

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1655 / 1657

页数：3

共 8 条

[1]

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[3]

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[7] GAAS-GA1-XALXAS BURIED-HETEROSTRUCTURE INJECTION LASERS [J].

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JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4899-4906

[8] NEW GAAIAS-GAAS SURFACE-EMITTING LASER-DIODES WITH LATERAL PUMPING STRUCTURE [J].

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ELECTRONICS LETTERS, 1987, 23 (03) :123-124

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