NEW GAAIAS-GAAS SURFACE-EMITTING LASER-DIODES WITH LATERAL PUMPING STRUCTURE

被引：2

作者：

WU, YH ^{[1
]}

OGURA, M ^{[1
]}

WERNER, M ^{[1
]}

WANG, S ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 03期

关键词：

D O I：

10.1049/el:19870087

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：123 / 124

页数：2

共 9 条

[1] PULSED OSCILLATION OF GAALAS/GAAS SURFACE-EMITTING INJECTION-LASER [J].

IBARAKI, A ;

ISHIKAWA, S ;

OHKOUCHI, S ;

IGA, K .

ELECTRONICS LETTERS, 1984, 20 (10) :420-422

[2] ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS/GAAS SURFACE EMITTING JUNCTION LASER [J].

IGA, K ;

ISHIKAWA, S ;

OHKOUCHI, S ;

NISHIMURA, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) :663-668

[3] ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS GAAS SURFACE EMITTING INJECTION-LASER [J].

IGA, K ;

ISHIKAWA, S ;

OHKOUCHI, S ;

NISHIMURA, T .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :348-350

[4]

KOTAKI Y, 1984, 16 C SOL STAT DEV MA, P133

[5] SURFACE-EMITTING GAINASP INP INJECTION-LASER WITH SHORT CAVITY LENGTH [J].

MOTEGI, Y ;

SODA, H ;

IGA, K .

ELECTRONICS LETTERS, 1982, 18 (11) :461-463

[6]

OGURA M, 1984, 16TH 1984 INT C SOL, P137

[7] GAINASP-INP SURFACE EMITTING INJECTION-LASER WITH BURIED HETEROSTRUCTURES [J].

OKUDA, H ;

SODA, H ;

MORIKI, K ;

MOTEGI, Y ;

IGA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) :L563-L566

[8] GAINASP-INP SURFACE EMITTING INJECTION-LASERS [J].

SODA, H ;

IGA, K ;

KITAHARA, C ;

SUEMATSU, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) :2329-2330

[9] GAINASP-INP SURFACE EMITTING INJECTION-LASERS WITH SHORT CAVITY LENGTH [J].

SODA, H ;

MOTEGI, Y ;

IGA, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :1035-1041

← 1 →