PULSED OSCILLATION OF GAALAS/GAAS SURFACE-EMITTING INJECTION-LASER

被引:6
作者
IBARAKI, A
ISHIKAWA, S
OHKOUCHI, S
IGA, K
机构
关键词
D O I
10.1049/el:19840291
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:420 / 422
页数:3
相关论文
共 3 条
[1]   GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS [J].
HAYASHI, I ;
PANISH, MB ;
REINHART, FK .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :1929-&
[2]   LASING CHARACTERISTICS OF IMPROVED GAINASP-INP SURFACE EMITTING INJECTION-LASERS [J].
IGA, K ;
SODA, H ;
TERAKADO, T ;
SHIMIZU, S .
ELECTRONICS LETTERS, 1983, 19 (13) :457-458
[3]   ADDITIONAL DATA ON EFFECT OF DOPING ON LASING CHARACTERISTICS OF GAAS-ALX GA1-XAS DOUBLE-HETEROSTRUCTURE LASERS [J].
PINKAS, E ;
MILLER, BI ;
HAYASHI, I ;
FOY, PW .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :281-282