GAINASP-INP SURFACE EMITTING INJECTION-LASERS

被引：416

作者：

SODA, H ^{[1
]}

IGA, K ^{[1
]}

KITAHARA, C ^{[1
]}

SUEMATSU, Y ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 12期

关键词：

D O I：

10.1143/JJAP.18.2329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：2329 / 2330

页数：2

共 9 条

[1]

HALL RN, 1962, PHYS REV LETT, V9, P336

[2] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :283-285

[3] CARRIER LIFETIME MEASUREMENT OF GAINASP/INP DOUBLE-HETEROSTRUCTURE LASERS [J].

ITAYA, Y ;

SUEMATSU, Y ;

IGA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (06) :1057-1058

[4]

KEYES RJ, 1962, P IRE, V50, P1822

[5] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS [J].

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APPLIED PHYSICS LETTERS, 1962, 1 (03) :62-64

[6] GAINASP-INP DOUBLE HETEROSTRUCTURE LASERS PREPARED BY A NEW LPE APPARATUS [J].

OE, K ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (10) :2003-2004

[7] HIGHLY COLLIMATED LASER-BEAMS FROM ELECTRICALLY PUMPED SH GAAS-GAAIAS DISTRIBUTED-FEEDBACK LASERS [J].

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STREIFER, W .

APPLIED PHYSICS LETTERS, 1975, 26 (02) :48-50

[8] GAINASP-INP DH LASER GROWN BY NEWLY DESIGNED VERTICAL LPE FURNACE [J].

WAKAO, K ;

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KAMBAYASHI, T ;

IGA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (11) :2073-2074

[9] IN1-XGAXASYP1-Y-INP DH LASERS FABRICATED ON INP (100) SUBSTRATES [J].

YAMAMOTO, T ;

SAKAI, K ;

AKIBA, S ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) :95-98

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