GAINASP-INP SURFACE EMITTING INJECTION-LASERS WITH SHORT CAVITY LENGTH

被引：33

作者：

SODA, H

MOTEGI, Y

IGA, K

机构：

[1] TOKYO INST TECHNOL,YOKOHAMA,KANAGAWA 227,JAPAN

[2] HITACHI LTD,DIV OPT TECHNOL DEV PROJECT,KOKUBUNJI,TOKYO 185,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 06期

关键词：

D O I：

10.1109/JQE.1983.1072000

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1035 / 1041

页数：7

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