SHORT-CAVITY INGAASP INJECTION-LASERS - DEPENDENCE OF MODE SPECTRA AND SINGLE-LONGITUDINAL-MODE POWER ON CAVITY LENGTH

被引:160
作者
LEE, TP
BURRUS, CA
COPELAND, JA
DENTAI, AG
MARCUSE, D
机构
关键词
D O I
10.1109/JQE.1982.1071656
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1101 / 1113
页数:13
相关论文
共 24 条
[2]   SHORT-CAVITY SINGLE-MODE 1.3 MU-INGAASP LASERS WITH EVAPORATED HIGH-REFLECTIVITY MIRRORS [J].
BURRUS, CA ;
LEE, TP ;
DENTAI, AG .
ELECTRONICS LETTERS, 1981, 17 (25-2) :954-956
[3]   THRESHOLD CHARACTERISTICS OF MULTIMODE LASER OSCILLATORS [J].
CASPERSON, LW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5194-5201
[4]   SINGLE-MODE STABILIZATION BY TRAPS IN SEMICONDUCTOR-LASERS [J].
COPELAND, JA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (07) :721-727
[6]   CALCULATED ABSORPTION, EMISSION, AND GAIN IN IN0.72GA0.28AS0.6P0.4 [J].
DUTTA, NK .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6095-6100
[7]   OPTICAL MASER OSCILLATORS + NOISE [J].
GORDON, EI .
BELL SYSTEM TECHNICAL JOURNAL, 1964, 43 (1P2) :507-+
[8]   FABRICATION AND CHARACTERIZATION OF NARROW STRIPE INGAASP-INP BURIED HETEROSTRUCTURE LASERS [J].
HIRAO, M ;
DOI, A ;
TSUJI, S ;
NAKAMURA, M ;
AIKI, K .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4539-4540
[9]  
KRESSEL H, 1980, TOPICS APPLIED PHYSI, V39, pCH7
[10]  
Kressel H., 1977, SEMICONDUCTOR LASERS