SINGLE-MODE STABILIZATION BY TRAPS IN SEMICONDUCTOR-LASERS

被引:46
作者
COPELAND, JA
机构
关键词
D O I
10.1109/JQE.1980.1070571
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:721 / 727
页数:7
相关论文
共 17 条
[1]  
Adams M. J., 1970, Physica Status Solidi A, V1, P143, DOI 10.1002/pssa.19700010117
[2]  
BALLAND B, 1979, APPL PHYS LETT, V34, P107
[3]  
CASEY HC, 1978, HETEROSTRUCTURE LA A, P56
[4]   SEMI-CONDUCTOR-LASER SELF PULSING DUE TO DEEP LEVEL TRAPS [J].
COPELAND, JA .
ELECTRONICS LETTERS, 1978, 14 (25) :809-810
[5]   DEEP LEVEL ASSOCIATED WITH SLOW DEGRADATION OF GAALAS DH LASER-DIODES [J].
IMAI, H ;
ISOZUMI, K ;
TAKUSAGAWA, M .
APPLIED PHYSICS LETTERS, 1978, 33 (04) :330-332
[6]   MICROSCALE DEGRADATION IN (GAAL)AS DOUBLE-HETEROSTRUCTURE DIODE-LASERS [J].
KATO, D .
APPLIED PHYSICS LETTERS, 1977, 31 (09) :588-590
[7]  
KOBAYASHI T, 1978, 1978 IEEE SEM LAS C
[8]   CAPACITANCE SPECTROSCOPY STUDIES OF DEGRADED ALXGA1-XAS DH STRIPE-GEOMETRY LASERS [J].
LANG, DV ;
HARTMAN, RL ;
SCHUMAKER, NE .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) :4986-4992
[9]  
McKelvey J. P., 1966, SOLID STATE SEMICOND, P325
[10]  
MERZ JL, 1979, PHYS REV