DISTRIBUTED FEED BACK SURFACE EMITTING LASER DIODE WITH MULTILAYERED HETEROSTRUCTURE

[1] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 150 - &

[2] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[3] GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE DISTRIBUTED-FEEDBACK DIODE LASERS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (09) : 487 - 488

[4] NAMIZAKI H, 1974, J APPL PHYS, V45, P2785, DOI 10.1063/1.1663670

[5] GAAS/ALXGA1-XAS MULTILAYER REFLECTOR FOR SURFACE EMITTING LASER DIODE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02): : L112 - L114

[6] OGURA M, 1982, 2ND INT S MOL BEAM E, P69

[7] GAINASP-INP SURFACE EMITTING INJECTION-LASERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) : 2329 - 2330

[8] MULTILAYER GAAS-AL0.3GA0.7AS DIELECTRIC QUARTER WAVE STACKS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED OPTICS, 1975, 14 (11): : 2627 - 2630

[1] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 150 - &

[2] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[3] GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE DISTRIBUTED-FEEDBACK DIODE LASERS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (09) : 487 - 488

[4] NAMIZAKI H, 1974, J APPL PHYS, V45, P2785, DOI 10.1063/1.1663670

[5] GAAS/ALXGA1-XAS MULTILAYER REFLECTOR FOR SURFACE EMITTING LASER DIODE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02): : L112 - L114

[6] OGURA M, 1982, 2ND INT S MOL BEAM E, P69

[7] GAINASP-INP SURFACE EMITTING INJECTION-LASERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) : 2329 - 2330

[8] MULTILAYER GAAS-AL0.3GA0.7AS DIELECTRIC QUARTER WAVE STACKS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED OPTICS, 1975, 14 (11): : 2627 - 2630