GAAS-GA1-XALXAS BURIED-HETEROSTRUCTURE INJECTION LASERS

被引：247

作者：

TSUKADA, T ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

关键词：

D O I：

10.1063/1.1663151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4899 / 4906

页数：8

共 15 条

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[2] [Anonymous], 1969, FIZ TEKHNIKA POLUPRO
[3] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K
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HAKKI, BW
HARTMAN, RL
DASARO, LA
[J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1042 - 1044
[4] OPTIMUM STRIP WIDTH FOR CONTINUOUS OPERATION OF GAAS JUNCTION LASERS
DYMENT, JC
RIPPER, JE
ZACHOS, TH
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1802 - +
[5] Eliseev P. G., 1973, Journal of Luminescence, V7, P338, DOI 10.1016/0022-2313(73)90074-4
[6] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS
HAYASHI, I
PANISH, MB
REINHART, FK
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 1929 - &
[7] HAYASHI I, 1969, IEEE J QUANTUM ELECT, VQE 5, P211
[8] ITO R, UNPUBLISHED
[9] JENKINS FA, 1957, FUNDAMENTALS OPTICS, P359
[10] NAKAMURA S, PRIVATE COMMUNICATIO