MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS QUANTUM WELLS ON CHANNELED SUBSTRATES

被引：29

作者：

MEIER, HP ^{[1
]}

VANGIESON, E ^{[1
]}

WALTER, W ^{[1
]}

HARDER, C ^{[1
]}

KRAHL, M ^{[1
]}

BIMBERG, D ^{[1
]}

机构：

[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,D-1000 BERLIN 12,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.100943

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：433 / 435

页数：3

共 11 条

[1] KINETICS OF RELAXATION AND RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN GAAS - CARRIER CAPTURE BY IMPURITIES
BIMBERG, D
MUNZEL, H
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CHRISTEN, J
[J]. PHYSICAL REVIEW B, 1985, 31 (12): : 7788 - 7799
[2] HIGH-POWER RIDGE-WAVE-GUIDE ALGAAS GRIN-SCH LASER DIODE
HARDER, C
BUCHMANN, P
MEIER, H
[J]. ELECTRONICS LETTERS, 1986, 22 (20) : 1081 - 1082
[3] INNER-STRIPE ALGAAS/GAAS LASER DIODE BY SINGLE-STEP MOLECULAR-BEAM EPITAXY
IMANAKA, K
IMAMOTO, H
SATO, F
ASAI, M
SHIMURA, M
[J]. ELECTRONICS LETTERS, 1987, 23 (05) : 209 - 210
[4] MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS SUPERLATTICE HETEROSTRUCTURES ON NONPLANAR SUBSTRATES
KAPON, E
TAMARGO, MC
HWANG, DM
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (06) : 347 - 349
[5] PATTERNED QUANTUM WELL SEMICONDUCTOR INJECTION-LASER GROWN BY MOLECULAR-BEAM EPITAXY
KAPON, E
HARBISON, JP
YUN, CP
STOFFEL, NG
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (08) : 607 - 609
[6] PAIR-GROOVE-SUBSTRATE GAAS/ALGAAS MULTIQUANTUM WELL LASERS BY MOLECULAR-BEAM EPITAXY
MANNOH, M
YUASA, T
NARITSUKA, S
SHINOZAKI, K
ISHII, M
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 728 - 731
[7] Meier H. P., 1988, Gallium Arsenide and Related Compounds 1987. Proceedings of the Fourteenth International Symposium, P609
[8] HIGH-QUALITY MOLECULAR-BEAM EPITAXIAL-GROWTH ON PATTERNED GAAS SUBSTRATES
SMITH, JS
DERRY, PL
MARGALIT, S
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 712 - 715
[9] VANGIESON E, UNPUB
[10] SINGLE-LONGITUDINAL-MODE GAAS GAALAS CHANNELED-SUBSTRATE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
WU, YH
WERNER, M
CHEN, KL
WANG, S
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 834 - 836

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