PAIR-GROOVE-SUBSTRATE GAAS/ALGAAS MULTIQUANTUM WELL LASERS BY MOLECULAR-BEAM EPITAXY

被引：14

作者：

MANNOH, M

YUASA, T

NARITSUKA, S

SHINOZAKI, K

ISHII, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.96018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：728 / 731

页数：4

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[1] TWIN-CHANNEL SUBSTRATE-MESA-GUIDE INJECTION-LASERS FABRICATED BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
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[2] GROWTH-CHARACTERISTICS OF GAAS-GA1-XALXAS STRUCTURES FABRICATED BY LIQUID-PHASE EPITAXY OVER PREFERENTIALLY ETCHED CHANNELS
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[J]. APPLIED PHYSICS LETTERS, 1976, 28 (04) : 234 - 237
[3] GAALAS BURIED MULTIQUANTUM WELL LASERS FABRICATED BY DIFFUSION-INDUCED DISORDERING
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[J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 1 - 3
[4] CURRENT INJECTION GAAS-ALXGA1-XAS MULTI-QUANTUM-WELL HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 673 - 675
[5] GROWTH OF GAAS-GA1-XALXAS OVER PREFERENTIALLY ETCHED CHANNELS BY MOLECULAR-BEAM EPITAXY - TECHNIQUE FOR 2-DIMENSIONAL THIN-FILM DEFINITION
TSANG, WT
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 293 - 296
[6] A GRADED-INDEX WAVE-GUIDE SEPARATE-CONFINEMENT LASER WITH VERY LOW THRESHOLD AND A NARROW GAUSSIAN-BEAM
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (02) : 134 - 137
[7] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 786 - 788
[8] HIGH-POWER OPERATION OF INDEX-GUIDED VISIBLE GAAS/GAALAS MULTIQUANTUM WELL LASERS
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ONO, Y
CHINONE, N
KAJIMURA, T
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (08) : 818 - 820
[9] CHANNELED-SUBSTRATE GAAS/ALGAAS MULTIPLE QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
WU, YH
WERNER, M
WANG, S
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 606 - 608