GROWTH OF GAAS-GA1-XALXAS OVER PREFERENTIALLY ETCHED CHANNELS BY MOLECULAR-BEAM EPITAXY - TECHNIQUE FOR 2-DIMENSIONAL THIN-FILM DEFINITION

被引:151
作者
TSANG, WT [1 ]
CHO, AY [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.89373
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:293 / 296
页数:4
相关论文
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