SINGLE-LONGITUDINAL-MODE GAAS GAALAS CHANNELED-SUBSTRATE LASERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：17

作者：

WU, YH ^{[1
]}

WERNER, M ^{[1
]}

CHEN, KL ^{[1
]}

WANG, S ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 09期

关键词：

D O I：

10.1063/1.94941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：834 / 836

页数：3

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共 9 条

[1] TRANSVERSE MODE STABILIZED ALX GA1-XAS INJECTION-LASERS WITH CHANNELED-SUBSTRATE-PLANAR STRUCTURE
AIKI, K
NAKAMURA, M
KURODA, T
UMEDA, J
ITO, R
CHINONE, N
MAEDA, M
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) : 89 - 94
[2] ETCHED BURIED HETEROSTRUCTURE GAAS-GAALAS INJECTION LASERS
BURNHAM, RD
SCIFRES, DR
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (09) : 510 - 511
[3] DUPUIS RD, 1978, APPL PHYS LETT, V33, P15
[4] CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE GAAS-(GAAL)AS INJECTION-LASERS
KIRKBY, PA
THOMPSON, GHB
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) : 4578 - 4589
[5] KIRKBY PA, 1978, ELECTRON LETT, V15, P824
[6] TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION
NAMIZAKI, H
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 427 - 431
[7] REDUCTION OF THRESHOLD CURRENT IN GAALAS TERRACED SUBSTRATE LASERS
SUGINO, T
ITOH, K
SHIMIZU, H
WADA, M
TERAMOTO, I
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 745 - 750
[8] GROWTH OF GAAS-GA1-XALXAS OVER PREFERENTIALLY ETCHED CHANNELS BY MOLECULAR-BEAM EPITAXY - TECHNIQUE FOR 2-DIMENSIONAL THIN-FILM DEFINITION
TSANG, WT
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 293 - 296
[9] GAAS-GA1-XALXAS BURIED-HETEROSTRUCTURE INJECTION LASERS
TSUKADA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 4899 - 4906