PATTERNED QUANTUM WELL SEMICONDUCTOR INJECTION-LASER GROWN BY MOLECULAR-BEAM EPITAXY

被引:53
作者
KAPON, E
HARBISON, JP
YUN, CP
STOFFEL, NG
机构
关键词
D O I
10.1063/1.99379
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:607 / 609
页数:3
相关论文
共 13 条
[1]   QUANTUM NOISE AND DYNAMICS IN QUANTUM WELL AND QUANTUM WIRE LASERS [J].
ARAKAWA, Y ;
VAHALA, K ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1984, 45 (09) :950-952
[2]   ULTRALOW-THRESHOLD GRADED-INDEX SEPARATE-CONFINEMENT SINGLE QUANTUM-WELL BURIED HETEROSTRUCTURE (AL,GA)AS LASERS WITH HIGH REFLECTIVITY COATINGS [J].
DERRY, PL ;
YARIV, A ;
LAU, KY ;
BARCHAIM, N ;
LEE, K ;
ROSENBERG, J .
APPLIED PHYSICS LETTERS, 1987, 50 (25) :1773-1775
[3]   GAAS/GAALAS QUANTUM-WELL LASER WITH A LATERAL SPATIAL VARIATION IN THICKNESS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
FEKETE, D ;
BOUR, D ;
BALLANTYNE, JM ;
EASTMAN, LF .
APPLIED PHYSICS LETTERS, 1987, 50 (11) :635-637
[4]   HIGH-POWER RIDGE-WAVE-GUIDE ALGAAS GRIN-SCH LASER DIODE [J].
HARDER, C ;
BUCHMANN, P ;
MEIER, H .
ELECTRONICS LETTERS, 1986, 22 (20) :1081-1082
[5]   VERY LOW THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM-VPE [J].
HERSEE, SD ;
BALDY, M ;
ASSENAT, P ;
DECREMOUX, B ;
DUCHEMIN, JP .
ELECTRONICS LETTERS, 1982, 18 (20) :870-871
[6]   TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR A QUANTUM-WELL HETEROSTRUCTURE LASER [J].
HESS, K ;
VOJAK, BA ;
HOLONYAK, N ;
CHIN, R .
SOLID-STATE ELECTRONICS, 1980, 23 (06) :585-589
[7]   MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS SUPERLATTICE HETEROSTRUCTURES ON NONPLANAR SUBSTRATES [J].
KAPON, E ;
TAMARGO, MC ;
HWANG, DM .
APPLIED PHYSICS LETTERS, 1987, 50 (06) :347-349
[9]   LOW THRESHOLD PLANAR BURIED HETEROSTRUCTURE LASERS FABRICATED BY IMPURITY-INDUCED DISORDERING [J].
THORNTON, RL ;
BURNHAM, RD ;
PAOLI, TL ;
HOLONYAK, N ;
DEPPE, DG .
APPLIED PHYSICS LETTERS, 1985, 47 (12) :1239-1241
[10]   ULTRALOW THRESHOLD, GRADED-INDEX WAVEGUIDE, SEPARATE CONFINEMENT, CW BURIED-HETEROSTRUCTURE LASERS [J].
TSANG, WT ;
LOGAN, RA ;
DITZENBERGER, JA .
ELECTRONICS LETTERS, 1982, 18 (19) :845-847