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GAAS/GAALAS QUANTUM-WELL LASER WITH A LATERAL SPATIAL VARIATION IN THICKNESS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
被引:15
作者
:
FEKETE, D
论文数:
0
引用数:
0
h-index:
0
FEKETE, D
BOUR, D
论文数:
0
引用数:
0
h-index:
0
BOUR, D
BALLANTYNE, JM
论文数:
0
引用数:
0
h-index:
0
BALLANTYNE, JM
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
EASTMAN, LF
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1987年
/ 50卷
/ 11期
关键词
:
D O I
:
10.1063/1.98104
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:635 / 637
页数:3
相关论文
共 9 条
[1]
CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS DIODE-LASERS - STRUCTURES AND ELECTROOPTICAL CHARACTERISTICS
BOTEZ, D
论文数:
0
引用数:
0
h-index:
0
BOTEZ, D
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(12)
: 2290
-
2309
[2]
BURNHAM RD, 1981, P SOC PHOTO-OPT INST, V272, P84, DOI 10.1117/12.965696
[3]
SELF-ALIGNED GAAS-GAALAS SEMICONDUCTOR-LASER WITH LATERAL SPATIAL VARIATION IN THICKNESS GROWN BY METALORGANIC-CHEMICAL VAPOR-DEPOSITION
FEKETE, D
论文数:
0
引用数:
0
h-index:
0
FEKETE, D
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
BURNHAM, RD
SCIFRES, DR
论文数:
0
引用数:
0
h-index:
0
SCIFRES, DR
STREIFER, W
论文数:
0
引用数:
0
h-index:
0
STREIFER, W
YINGLING, RD
论文数:
0
引用数:
0
h-index:
0
YINGLING, RD
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(08)
: 607
-
609
[4]
SELECTIVE GROWTH OF ALXGA1-XAS EMBEDDED IN ETCHED GROOVES ON GAAS BY LOW-PRESSURE OMVPE
KAMON, K
论文数:
0
引用数:
0
h-index:
0
KAMON, K
SHIMAZU, M
论文数:
0
引用数:
0
h-index:
0
SHIMAZU, M
KIMURA, K
论文数:
0
引用数:
0
h-index:
0
KIMURA, K
MIHARA, M
论文数:
0
引用数:
0
h-index:
0
MIHARA, M
ISHII, M
论文数:
0
引用数:
0
h-index:
0
ISHII, M
[J].
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
: 297
-
302
[5]
PROPERTIES OF MO-CVD-GROWN GAAS-GAALAS LASERS AS A FUNCTION OF STRIPEWIDTH
SCIFRES, DR
论文数:
0
引用数:
0
h-index:
0
SCIFRES, DR
STREIFER, W
论文数:
0
引用数:
0
h-index:
0
STREIFER, W
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
BURNHAM, RD
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(12)
: 2310
-
2316
[6]
THOMPSON GHB, 1980, PHYSICS SEMICONDUCTO, P300
[7]
TSANG WT, 1981, APPL PHYS LETT, V39, P143
[8]
CIRCUIT MODELING OF THE EFFECT OF DIFFUSION ON DAMPING IN A NARROW-STRIPE SEMICONDUCTOR-LASER
TUCKER, RS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV QUEENSLAND,DEPT ELECT ENGN,ST LUCIA,QLD 4067,AUSTRALIA
UNIV QUEENSLAND,DEPT ELECT ENGN,ST LUCIA,QLD 4067,AUSTRALIA
TUCKER, RS
POPE, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV QUEENSLAND,DEPT ELECT ENGN,ST LUCIA,QLD 4067,AUSTRALIA
UNIV QUEENSLAND,DEPT ELECT ENGN,ST LUCIA,QLD 4067,AUSTRALIA
POPE, DJ
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1983,
19
(07)
: 1179
-
1183
[9]
HIGH EXTERNAL EFFICIENCY (36-PERCENT) 5-MU-M MESA ISOLATED GAAS QUANTUM WELL LASER BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
WELCH, DF
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR DISCREET SEMICOND DEVICE,SYRACUSE,NY 13221
GE,CTR DISCREET SEMICOND DEVICE,SYRACUSE,NY 13221
WELCH, DF
SCHAUS, CF
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR DISCREET SEMICOND DEVICE,SYRACUSE,NY 13221
GE,CTR DISCREET SEMICOND DEVICE,SYRACUSE,NY 13221
SCHAUS, CF
SHEALY, JR
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR DISCREET SEMICOND DEVICE,SYRACUSE,NY 13221
GE,CTR DISCREET SEMICOND DEVICE,SYRACUSE,NY 13221
SHEALY, JR
[J].
APPLIED PHYSICS LETTERS,
1985,
46
(02)
: 121
-
123
←
1
→
共 9 条
[1]
CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS DIODE-LASERS - STRUCTURES AND ELECTROOPTICAL CHARACTERISTICS
BOTEZ, D
论文数:
0
引用数:
0
h-index:
0
BOTEZ, D
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(12)
: 2290
-
2309
[2]
BURNHAM RD, 1981, P SOC PHOTO-OPT INST, V272, P84, DOI 10.1117/12.965696
[3]
SELF-ALIGNED GAAS-GAALAS SEMICONDUCTOR-LASER WITH LATERAL SPATIAL VARIATION IN THICKNESS GROWN BY METALORGANIC-CHEMICAL VAPOR-DEPOSITION
FEKETE, D
论文数:
0
引用数:
0
h-index:
0
FEKETE, D
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
BURNHAM, RD
SCIFRES, DR
论文数:
0
引用数:
0
h-index:
0
SCIFRES, DR
STREIFER, W
论文数:
0
引用数:
0
h-index:
0
STREIFER, W
YINGLING, RD
论文数:
0
引用数:
0
h-index:
0
YINGLING, RD
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(08)
: 607
-
609
[4]
SELECTIVE GROWTH OF ALXGA1-XAS EMBEDDED IN ETCHED GROOVES ON GAAS BY LOW-PRESSURE OMVPE
KAMON, K
论文数:
0
引用数:
0
h-index:
0
KAMON, K
SHIMAZU, M
论文数:
0
引用数:
0
h-index:
0
SHIMAZU, M
KIMURA, K
论文数:
0
引用数:
0
h-index:
0
KIMURA, K
MIHARA, M
论文数:
0
引用数:
0
h-index:
0
MIHARA, M
ISHII, M
论文数:
0
引用数:
0
h-index:
0
ISHII, M
[J].
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
: 297
-
302
[5]
PROPERTIES OF MO-CVD-GROWN GAAS-GAALAS LASERS AS A FUNCTION OF STRIPEWIDTH
SCIFRES, DR
论文数:
0
引用数:
0
h-index:
0
SCIFRES, DR
STREIFER, W
论文数:
0
引用数:
0
h-index:
0
STREIFER, W
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
BURNHAM, RD
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(12)
: 2310
-
2316
[6]
THOMPSON GHB, 1980, PHYSICS SEMICONDUCTO, P300
[7]
TSANG WT, 1981, APPL PHYS LETT, V39, P143
[8]
CIRCUIT MODELING OF THE EFFECT OF DIFFUSION ON DAMPING IN A NARROW-STRIPE SEMICONDUCTOR-LASER
TUCKER, RS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV QUEENSLAND,DEPT ELECT ENGN,ST LUCIA,QLD 4067,AUSTRALIA
UNIV QUEENSLAND,DEPT ELECT ENGN,ST LUCIA,QLD 4067,AUSTRALIA
TUCKER, RS
POPE, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV QUEENSLAND,DEPT ELECT ENGN,ST LUCIA,QLD 4067,AUSTRALIA
UNIV QUEENSLAND,DEPT ELECT ENGN,ST LUCIA,QLD 4067,AUSTRALIA
POPE, DJ
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1983,
19
(07)
: 1179
-
1183
[9]
HIGH EXTERNAL EFFICIENCY (36-PERCENT) 5-MU-M MESA ISOLATED GAAS QUANTUM WELL LASER BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
WELCH, DF
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR DISCREET SEMICOND DEVICE,SYRACUSE,NY 13221
GE,CTR DISCREET SEMICOND DEVICE,SYRACUSE,NY 13221
WELCH, DF
SCHAUS, CF
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR DISCREET SEMICOND DEVICE,SYRACUSE,NY 13221
GE,CTR DISCREET SEMICOND DEVICE,SYRACUSE,NY 13221
SCHAUS, CF
SHEALY, JR
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR DISCREET SEMICOND DEVICE,SYRACUSE,NY 13221
GE,CTR DISCREET SEMICOND DEVICE,SYRACUSE,NY 13221
SHEALY, JR
[J].
APPLIED PHYSICS LETTERS,
1985,
46
(02)
: 121
-
123
←
1
→