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HIGH-QUALITY MOLECULAR-BEAM EPITAXIAL-GROWTH ON PATTERNED GAAS SUBSTRATES
被引:70
作者
:
SMITH, JS
论文数:
0
引用数:
0
h-index:
0
SMITH, JS
DERRY, PL
论文数:
0
引用数:
0
h-index:
0
DERRY, PL
MARGALIT, S
论文数:
0
引用数:
0
h-index:
0
MARGALIT, S
YARIV, A
论文数:
0
引用数:
0
h-index:
0
YARIV, A
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1985年
/ 47卷
/ 07期
关键词
:
D O I
:
10.1063/1.96012
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:712 / 715
页数:4
相关论文
共 7 条
[1]
GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE)
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
BALLAMY, WC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BALLAMY, WC
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(02)
: 783
-
785
[2]
INFLUENCE OF GROWTH-CONDITIONS ON THE THRESHOLD CURRENT-DENSITY OF DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
CASEY, HC
RADICE, C
论文数:
0
引用数:
0
h-index:
0
RADICE, C
FOY, PW
论文数:
0
引用数:
0
h-index:
0
FOY, PW
[J].
ELECTRONICS LETTERS,
1980,
16
(02)
: 72
-
74
[3]
GROWTH OF 3-DIMENSIONAL DIELECTRIC WAVEGUIDES FOR INTEGRATED OPTICS BY MOLECULAR-BEAM EPITAXY METHOD
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
REINHART, FK
论文数:
0
引用数:
0
h-index:
0
REINHART, FK
[J].
APPLIED PHYSICS LETTERS,
1972,
21
(08)
: 355
-
&
[4]
NAGATA S, 1977, APPL PHYS LETT, V30, P505
[5]
MONOLITHIC INTEGRATION OF AN ALGAAS/GAAS MULTIQUANTUM WELL LASER AND GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON A SEMI-INSULATING GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY
SANADA, T
论文数:
0
引用数:
0
h-index:
0
SANADA, T
YAMAKOSHI, S
论文数:
0
引用数:
0
h-index:
0
YAMAKOSHI, S
WADA, O
论文数:
0
引用数:
0
h-index:
0
WADA, O
FUJII, T
论文数:
0
引用数:
0
h-index:
0
FUJII, T
SAKURAI, T
论文数:
0
引用数:
0
h-index:
0
SAKURAI, T
SASAKI, M
论文数:
0
引用数:
0
h-index:
0
SASAKI, M
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(03)
: 325
-
327
[6]
GROWTH OF GAAS-GA1-XALXAS OVER PREFERENTIALLY ETCHED CHANNELS BY MOLECULAR-BEAM EPITAXY - TECHNIQUE FOR 2-DIMENSIONAL THIN-FILM DEFINITION
TSANG, WT
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
TSANG, WT
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
[J].
APPLIED PHYSICS LETTERS,
1977,
30
(06)
: 293
-
296
[7]
SINGLE-LONGITUDINAL-MODE GAAS GAALAS CHANNELED-SUBSTRATE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
WU, YH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
WU, YH
WERNER, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
WERNER, M
CHEN, KL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
CHEN, KL
WANG, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
WANG, S
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(09)
: 834
-
836
←
1
→
共 7 条
[1]
GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE)
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
BALLAMY, WC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BALLAMY, WC
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(02)
: 783
-
785
[2]
INFLUENCE OF GROWTH-CONDITIONS ON THE THRESHOLD CURRENT-DENSITY OF DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
CASEY, HC
RADICE, C
论文数:
0
引用数:
0
h-index:
0
RADICE, C
FOY, PW
论文数:
0
引用数:
0
h-index:
0
FOY, PW
[J].
ELECTRONICS LETTERS,
1980,
16
(02)
: 72
-
74
[3]
GROWTH OF 3-DIMENSIONAL DIELECTRIC WAVEGUIDES FOR INTEGRATED OPTICS BY MOLECULAR-BEAM EPITAXY METHOD
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
REINHART, FK
论文数:
0
引用数:
0
h-index:
0
REINHART, FK
[J].
APPLIED PHYSICS LETTERS,
1972,
21
(08)
: 355
-
&
[4]
NAGATA S, 1977, APPL PHYS LETT, V30, P505
[5]
MONOLITHIC INTEGRATION OF AN ALGAAS/GAAS MULTIQUANTUM WELL LASER AND GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON A SEMI-INSULATING GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY
SANADA, T
论文数:
0
引用数:
0
h-index:
0
SANADA, T
YAMAKOSHI, S
论文数:
0
引用数:
0
h-index:
0
YAMAKOSHI, S
WADA, O
论文数:
0
引用数:
0
h-index:
0
WADA, O
FUJII, T
论文数:
0
引用数:
0
h-index:
0
FUJII, T
SAKURAI, T
论文数:
0
引用数:
0
h-index:
0
SAKURAI, T
SASAKI, M
论文数:
0
引用数:
0
h-index:
0
SASAKI, M
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(03)
: 325
-
327
[6]
GROWTH OF GAAS-GA1-XALXAS OVER PREFERENTIALLY ETCHED CHANNELS BY MOLECULAR-BEAM EPITAXY - TECHNIQUE FOR 2-DIMENSIONAL THIN-FILM DEFINITION
TSANG, WT
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
TSANG, WT
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHO, AY
[J].
APPLIED PHYSICS LETTERS,
1977,
30
(06)
: 293
-
296
[7]
SINGLE-LONGITUDINAL-MODE GAAS GAALAS CHANNELED-SUBSTRATE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
WU, YH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
WU, YH
WERNER, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
WERNER, M
CHEN, KL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
CHEN, KL
WANG, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
WANG, S
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(09)
: 834
-
836
←
1
→