MONOLITHIC INTEGRATION OF AN ALGAAS/GAAS MULTIQUANTUM WELL LASER AND GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON A SEMI-INSULATING GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY

被引：17

作者：

SANADA, T

YAMAKOSHI, S

WADA, O

FUJII, T

SAKURAI, T

SASAKI, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.94741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：325 / 327

页数：3

共 11 条

[1] GAAS INTEGRATED OPTOELECTRONICS [J].

BARCHAIM, N ;

MARGALIT, S ;

YARIV, A ;

URY, I .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1372-1381

[2]

CARNEY JK, 1982 GAAS IC S, P38

[3]

FUJII T, 1983, J CRYST GROWTH, V61, pR20

[4]

MATSUEDA H, CLEO 83, P120

[5] OHMIC CONTACTS TO P-GAAS WITH AU-ZN-AU STRUCTURE [J].

SANADA, T ;

WADA, O .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (08) :L491-L494

[6] MONOLITHIC 1X4 ARRAY OF UNIFORM RADIANCE ALGAAS-GAAS LEDS GROWN BY MOLECULAR-BEAM EPITAXY [J].

SUGAHARA, T ;

WADA, O ;

FUJH, T ;

HIYAMIZU, S ;

SAKURAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06) :L349-L350

[7] MONOLITHIC INTEGRATION OF A PHOTO-DIODE AND A FIELD-EFFECT TRANSISTOR ON A GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

WADA, O ;

MIURA, S ;

ITO, M ;

FUJII, T ;

SAKURAI, T ;

HIYAMIZU, S .

APPLIED PHYSICS LETTERS, 1983, 42 (04) :380-382

[8] MONOLITHIC INTEGRATION OF A DOUBLE HETEROSTRUCTURE LIGHT-EMITTING DIODE AND A FIELD-EFFECT TRANSISTOR-AMPLIFIER USING MOLECULAR-BEAM GROWN ALGAAS/GAAS [J].

WADA, O ;

SANADA, T ;

HAMAGUCHI, H ;

FUJII, T ;

SAKURAI, T .

APPLIED PHYSICS LETTERS, 1983, 43 (04) :345-347

[9] MONOLITHIC INTEGRATION OF AN ALGAAS GAAS DH LED WITH A GAAS-FET DRIVER [J].

WADA, O ;

SANADA, T ;

SAKURAI, T .

ELECTRON DEVICE LETTERS, 1982, 3 (10) :305-307

[10]

YAMAKOSHI S, 1982, IEDM SAN FRANCISCO, P342

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