GAAS INTEGRATED OPTOELECTRONICS

被引：47

作者：

BARCHAIM, N ^{[1
]}

MARGALIT, S ^{[1
]}

YARIV, A ^{[1
]}

URY, I ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 09期

关键词：

D O I：

10.1109/T-ED.1982.20885

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1372 / 1381

页数：10

相关论文

共 29 条

[1] ANKRI D, 1981, OCT GAAS IC S SAN DI
[2] [Anonymous], 1977, SEMICONDUCTOR LASERS
[3] GAAS MESFET - HIGH-SPEED OPTICAL DETECTOR
BAACK, C
ELZE, G
WALF, G
[J]. ELECTRONICS LETTERS, 1977, 13 (07) : 193 - 193
[4] DESIGN AND FABRICATION OF HIGH-SPEED GAAIAS-GAAS HETEROJUNCTION TRANSISTORS
BAILBE, JP
MARTY, A
HIEP, PH
REY, GE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1160 - 1164
[5] MONOLITHIC INTEGRATION OF A GAALAS BURIED-HETEROSTRUCTURE LASER AND A BIPOLAR PHOTO-TRANSISTOR
BARCHAIM, N
HARDER, C
KATZ, J
MARGALIT, S
YARIV, A
URY, I
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 556 - 557
[6] BURIED HETEROSTRUCTURE ALGAAS LASERS ON SEMI-INSULATING SUBSTRATES
BARCHAIM, N
KATZ, J
URY, I
YARIV, A
[J]. ELECTRONICS LETTERS, 1981, 17 (03) : 108 - 109
[7] BARCHAIM N, UNPUB MONOLITHIC INT
[8] INTEGRATED DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS PHOTORECEIVER WITH AUTOMATIC GAIN-CONTROL
BARNARD, J
OHNO, H
WOOD, CEC
EASTMAN, LF
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (01): : 7 - 9
[9] ALGAAS LASERS WITH MICRO-CLEAVED MIRRORS SUITABLE FOR MONOLITHIC INTEGRATION
BLAUVELT, H
BARCHAIM, N
FEKETE, D
MARGALIT, S
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 289 - 290
[10] PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC
EDEN, RC
WELCH, BM
ZUCCA, R
LONG, SI
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 299 - 317