MONOLITHIC INTEGRATION OF A PHOTO-DIODE AND A FIELD-EFFECT TRANSISTOR ON A GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY

被引：24

作者：

WADA, O

MIURA, S

ITO, M

FUJII, T

SAKURAI, T

HIYAMIZU, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 04期

关键词：

D O I：

10.1063/1.93946

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：380 / 382

页数：3

共 10 条

[1] INTEGRATED DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS PHOTORECEIVER WITH AUTOMATIC GAIN-CONTROL [J].

BARNARD, J ;

OHNO, H ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1981, 2 (01) :7-9

[2]

FUJII T, 1982, 1982 P MOL BEAM EP C, P85

[3] MONOLITHIC INTEGRATION OF A GAALAS INJECTION-LASER WITH A SCHOTTKY-GATE FIELD-EFFECT TRANSISTOR [J].

FUKUZAWA, T ;

NAKAMURA, M ;

HIRAO, M ;

KURODA, T ;

UMEDA, J .

APPLIED PHYSICS LETTERS, 1980, 36 (03) :181-183

[4] MONOLITHIC 1X4 ARRAY OF UNIFORM RADIANCE ALGAAS-GAAS LEDS GROWN BY MOLECULAR-BEAM EPITAXY [J].

SUGAHARA, T ;

WADA, O ;

FUJH, T ;

HIYAMIZU, S ;

SAKURAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06) :L349-L350

[5] VERY LOW CURRENT THRESHOLD GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :11-14

[6] ALGAAS/GAAS MICROCLEAVED FACET (MCF) LASER MONOLITHICALLY INTEGRATED WITH PHOTO-DIODE [J].

WADA, O ;

YAMAKOSHI, S ;

FUJII, T ;

HIYAMIZU, S ;

SAKURAI, T .

ELECTRONICS LETTERS, 1982, 18 (05) :189-190

[7]

WADA O, UNPUB IEEE ELECTRON

[8]

WADA O, 1982, UNPUB SOLID STATE DE

[9]

YAMAKOSHI S, 1982, 1982 P MOL BEAM EP C, P89

[10] MONOLITHICALLY INTEGRATED OPTICAL REPEATER [J].

YUST, M ;

BARCHAIM, N ;

IZADPANAH, SH ;

MARGALIT, S ;

URY, I ;

WILT, D ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1979, 35 (10) :795-797

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