MONOLITHICALLY INTEGRATED OPTICAL REPEATER

被引:48
作者
YUST, M
BARCHAIM, N
IZADPANAH, SH
MARGALIT, S
URY, I
WILT, D
YARIV, A
机构
[1] California Institute of Technology, Pasadena
关键词
D O I
10.1063/1.90939
中图分类号
O59 [应用物理学];
学科分类号
摘要
A monolithically integrated optical repeater has been fabricated on a single-crystal semi-insulating GaAs substrate. The repeater consists of an optical detector, an electronic amplifier, and a double heterostructure crowding effect laser. The repeater makes use of three metal semiconductor field effect transistors, one of which is used as the optical detector. With light from an external GaAlAs laser incident on the detector, an overall optical power gain of 10 dB from both laser facets was obtained.
引用
收藏
页码:795 / 797
页数:3
相关论文
共 7 条
[1]   GAAS MESFET - HIGH-SPEED OPTICAL DETECTOR [J].
BAACK, C ;
ELZE, G ;
WALF, G .
ELECTRONICS LETTERS, 1977, 13 (07) :193-193
[2]  
GAMMEL JC, 1978, P IEDM, P120
[3]   HIGH-TEMPERATURE SINGLE-MODE CW OPERATION WITH A JUNCTION-UP TJS']JS-LASER [J].
KUMABE, H ;
TANAKA, T ;
NAMIZAKI, H ;
ISHII, M ;
SUSAKI, W .
APPLIED PHYSICS LETTERS, 1978, 33 (01) :38-39
[4]   INTEGRATION OF AN INJECTION-LASER WITH A GUNN OSCILLATOR ON A SEMI-INSULATING GAAS SUBSTRATE [J].
LEE, CP ;
MARGALIT, S ;
URY, I ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1978, 32 (12) :806-807
[5]   DOUBLE-HETEROSTRUCTURE GAAS-GAAIAS INJECTION-LASERS ON SEMI-INSULATING SUBSTRATES USING CARRIER CROWDING [J].
LEE, CP ;
MARGALIT, S ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1977, 31 (04) :281-282
[6]   MONOLITHIC INTEGRATION OF AN INJECTION-LASER AND A METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].
URY, I ;
MARGALIT, S ;
YUST, M ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1979, 34 (07) :430-431
[7]  
Yariv A., 1973, Proceedings of the Esfahan Symposium on Fundamental and Applied Laser Physics, P897