INTEGRATION OF AN INJECTION-LASER WITH A GUNN OSCILLATOR ON A SEMI-INSULATING GAAS SUBSTRATE

被引：46

作者：

LEE, CP

MARGALIT, S

URY, I

YARIV, A

机构：

[1] California Institute of Technology, Pasadena

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 12期

关键词：

D O I：

10.1063/1.89922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The integration of an injection semiconductor laser with an active electronic device (Gunn oscillator) in a single epitaxial crystal device is demonstrated.

引用

页码：806 / 807

页数：2

共 5 条

[1] DOUBLE-HETEROSTRUCTURE GAAS-GAAIAS INJECTION-LASERS ON SEMI-INSULATING SUBSTRATES USING CARRIER CROWDING [J].

LEE, CP ;

MARGALIT, S ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :281-282

[2] GAAS-GAALAS INJECTION-LASERS ON SEMI-INSULATING SUBSTRATES USING LATERALLY DIFFUSED JUNCTIONS [J].

LEE, CP ;

MARGALIT, S ;

URY, I ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1978, 32 (07) :410-412

[3] MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J].

LIECHTI, CA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :279-330

[4] GUNN DEVICE GIGABIT RATE DIGITAL MICROCIRCUITS [J].

MAUSE, K ;

SCHLACHETZKI, A ;

HESSE, E ;

SALOW, H .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, SC10 (01) :2-12

[5] INTEGRATED-OPTICS AND NEW WAVE PHENOMENA IN OPTICAL-WAVEGUIDES [J].

TIEN, PK .

REVIEWS OF MODERN PHYSICS, 1977, 49 (02) :361-420

← 1 →