GAAS-GAALAS INJECTION-LASERS ON SEMI-INSULATING SUBSTRATES USING LATERALLY DIFFUSED JUNCTIONS

被引：38

作者：

LEE, CP

MARGALIT, S

URY, I

YARIV, A

机构：

[1] California Institute of Technology, Pasadena

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 07期

关键词：

D O I：

10.1063/1.90087

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-threshold GaAs-GaAlAs lasers operating in a stable single mode have been fabricated using laterally diffused junctions. The lasers are fabricated on semi-insulating substrates and can be integrated with other components.

引用

页码：410 / 412

页数：3

共 9 条

[1] LEAKY-MODE BURIED-HETEROSTRUCTURE ALGAAS INJECTION-LASERS
KAJIMURA, T
SAITO, K
SHIGE, N
ITO, R
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 590 - 591
[2] DOUBLE-HETEROSTRUCTURE GAAS-GAAIAS INJECTION-LASERS ON SEMI-INSULATING SUBSTRATES USING CARRIER CROWDING
LEE, CP
MARGALIT, S
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 281 - 282
[3] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS
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REINHART, FK
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4172 - 4176
[4] MARGALIT S, UNPUBLISHED
[5] TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION
NAMIZAKI, H
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 427 - 431
[6] NAMIZAKI H, 1974, J APPL PHYS, V45, P2785, DOI 10.1063/1.1663670
[7] LEAKY WAVE ROOM-TEMPERATURE DOUBLE HETEROSTRUCTURE GAAS - GAALAS DIODE-LASER
SCIFRES, DR
STREIFER, W
BURNHAM, RD
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 23 - 25
[8] NEW STRUCTURES OF GAALAS LATERAL-INJECTION LASER FOR LOW-THRESHOLD AND SINGLE-MODE OPERATION
SUSAKI, W
TANAKA, T
KAN, H
ISHII, M
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 587 - 591
[9] YARIV A, 1973, 1972 P ESF C PUR APP

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