NEW STRUCTURES OF GAALAS LATERAL-INJECTION LASER FOR LOW-THRESHOLD AND SINGLE-MODE OPERATION

被引：41

作者：

SUSAKI, W ^{[1
]}

TANAKA, T ^{[1
]}

KAN, H ^{[1
]}

ISHII, M ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1977年 / 13卷 / 08期

关键词：

D O I：

10.1109/JQE.1977.1069401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：587 / 591

页数：5

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[9] STRIPE-GEOMETRY DOUBLE HETEROSTRUCTURE JUNCTION LASERS - MODE STRUCTURE AND CW OPERATION ABOVE ROOM TEMPERATURE [J].

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