LEAKY WAVE ROOM-TEMPERATURE DOUBLE HETEROSTRUCTURE GAAS - GAALAS DIODE-LASER

被引：41

作者：

SCIFRES, DR ^{[1
]}

STREIFER, W ^{[1
]}

BURNHAM, RD ^{[1
]}

机构：

[1] XEROX PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 01期

关键词：

D O I：

10.1063/1.88881

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：23 / 25

页数：3

相关论文

共 5 条

[1] INTERNAL OPTICAL LOSSES IN VERY THIN CW HETEROJUNCTION LASER-DIODES
BUTLER, JK
KRESSEL, H
LADANY, I
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 402 - 408
[2] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV
CASEY, HC
SELL, DD
WECHT, KW
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 250 - 257
[3] BEAM DIVERGENCE OF EMISSION FROM DOUBLE-HETEROSTRUCTURE INJECTION LASERS
CASEY, HC
PANISH, MB
MERZ, JL
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5470 - 5475
[4] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS-EFFECT OF DOPING ON LASING CHARACTERISTICS OF GAAS
PINKAS, E
HAYASHI, I
MILLER, BI
FOY, PW
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2827 - &
[5] SUBSTRATE RADIATION LOSSES IN GAAS HETEROSTRUCTURE LASERS
STREIFER, W
BURNHAM, RD
SCIFRES, DR
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (03) : 177 - 182