SUBSTRATE RADIATION LOSSES IN GAAS HETEROSTRUCTURE LASERS

被引：35

作者：

STREIFER, W ^{[1
]}

BURNHAM, RD ^{[1
]}

SCIFRES, DR ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1976年 / 12卷 / 03期

关键词：

D O I：

10.1109/JQE.1976.1069118

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：177 / 182

页数：6

共 15 条

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[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1393 - 1395
[4] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV
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[6] MODE CONTROL IN GAAS LARGE-CAVITY DOUBLE-HETEROSTRUCTURE LASERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (05) : 2168 - 2173
[7] IKEGAMI I, 1972, IEEE J QUANTUM ELECT, V8, P470
[8] CHARACTERISTICS OF A DOUBLY CLAD OPTICAL FIBER WITH A LOW-INDEX INNER CLADDING
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1974, QE10 (12) : 879 - 887
[9] LARGE-OPTICAL-CAVITY (A1GA)AS-GAAS HETEROJUNCTION LASER DIODE - THRESHOLD AND EFFICIENCY
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HAWRYLO, FZ
LOCKWOOD, HF
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) : 561 - +
[10] Ohtaka Y., 1974, T I ELECTRONICS CO C, V57, P187

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