INFLUENCE OF ALXGA1-XAS LAYER THICKNESS ON THRESHOLD CURRENT-DENSITY AND DIFFERENTIAL QUANTUM EFFICIENCY FOR GAAS-ALXGA1-XAS DH LASERS

被引：16

作者：

CASEY, HC ^{[1
]}

PANISH, MB ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 03期

关键词：

D O I：

10.1063/1.321738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1393 / 1395

页数：3

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