LEAKY-MODE BURIED-HETEROSTRUCTURE ALGAAS INJECTION-LASERS

被引：25

作者：

KAJIMURA, T ^{[1
]}

SAITO, K ^{[1
]}

SHIGE, N ^{[1
]}

ITO, R ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,TOKYO,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 11期

关键词：

D O I：

10.1063/1.89247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：590 / 591

页数：2

相关论文

共 10 条

[1] Arai M., COMMUNICATION
[2] REFRACTIVE-INDEX OF ALXGA1-X AS BETWEEN 1.2 AND 1.8 EV
CASEY, HC
SELL, DD
PANISH, MB
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (02) : 63 - 65
[3] LOW-THRESHOLD DOUBLE HETEROJUNCTION ALGAAS-GAAS LASER-DIODES - THEORY AND EXPERIMENT
KRESSEL, H
ETTENBERG, M
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3533 - 3537
[4] LOSS MEASUREMENTS IN GAAS AND AL-XGA-1-XAS DIELECTRIC WAVEGUIDES BETWEEN 1.1 EV AND ENERGY-GAP
MERZ, JL
LOGAN, RA
SERGENT, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1436 - 1450
[5] LOW-LOSS ALXGA1-XAS WAVEGUIDES GROWN BY MOLECULAR-BEAM EPITAXY
MERZ, JL
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (08) : 456 - 458
[6] HOW MUCH AL IN ALGAAS-GAAS LASER
RODE, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) : 3887 - 3891
[7] LEAKY WAVE ROOM-TEMPERATURE DOUBLE HETEROSTRUCTURE GAAS - GAALAS DIODE-LASER
SCIFRES, DR
STREIFER, W
BURNHAM, RD
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 23 - 25
[8] CONCENTRATION-DEPENDENCE OF REFRACTIVE-INDEX FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.2 AND 1.8 EV
SELL, DD
CASEY, HC
WECHT, KW
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) : 2650 - 2657
[9] GAAS-GA1-XALXAS BURIED-HETEROSTRUCTURE INJECTION LASERS
TSUKADA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 4899 - 4906
[10] TSUKADA T, 1975, JPN J APPL PHYS, V15, P289