MONOLITHIC INTEGRATION OF A DOUBLE HETEROSTRUCTURE LIGHT-EMITTING DIODE AND A FIELD-EFFECT TRANSISTOR-AMPLIFIER USING MOLECULAR-BEAM GROWN ALGAAS/GAAS

被引：4

作者：

WADA, O ^{[1
]}

SANADA, T ^{[1
]}

HAMAGUCHI, H ^{[1
]}

FUJII, T ^{[1
]}

SAKURAI, T ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 04期

关键词：

D O I：

10.1063/1.94331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：345 / 347

页数：3

共 7 条

[1] MONOLITHIC INTEGRATION OF A GAALAS INJECTION-LASER WITH A SCHOTTKY-GATE FIELD-EFFECT TRANSISTOR [J].

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NAKAMURA, M ;

HIRAO, M ;

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UMEDA, J .

APPLIED PHYSICS LETTERS, 1980, 36 (03) :181-183

[2] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRONICS LETTERS, 1980, 16 (10) :353-355

[3]

SUGAHARA T, UNPUB

[4] MONOLITHIC INTEGRATION OF AN INJECTION-LASER AND A METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].

URY, I ;

MARGALIT, S ;

YUST, M ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1979, 34 (07) :430-431

[5] MONOLITHIC INTEGRATION OF A PHOTO-DIODE AND A FIELD-EFFECT TRANSISTOR ON A GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

WADA, O ;

MIURA, S ;

ITO, M ;

FUJII, T ;

SAKURAI, T ;

HIYAMIZU, S .

APPLIED PHYSICS LETTERS, 1983, 42 (04) :380-382

[6]

WADA O, 1982, IEEE ELECTRON DEVICE, V3, P305

[7]

YAMAKOSHI S, 1982, IEDM SAN FRANCISCO, P342

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