CATION INCORPORATION RATE LIMITATIONS IN MOLECULAR-BEAM EPITAXY - EFFECTS OF STRAIN AND SURFACE-COMPOSITION

被引：52

作者：

EVANS, KR ^{[1
]}

STUTZ, CE ^{[1
]}

LORANCE, DK ^{[1
]}

JONES, RL ^{[1
]}

机构：

[1] USAF,WRIGHT AERONAUT LABS,AVION LAB,DIV ELECTR TECHNOL AFWAL AAD,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：259 / 263

页数：5

共 21 条

[1] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS
ARTHUR, JR
[J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461
[2] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS
BACHRACH, RZ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1340 - 1343
[3] THERMAL-DESORPTION SPECTROSCOPY OF XE AT THE SI(111) AS A LOCAL PROBE FOR SURFACE-STRUCTURES
BARTHA, JW
BARJENBRUCH, U
HENZLER, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 1588 - 1591
[4] TEMPERATURE-DEPENDENCE OF MOLECULAR-BEAM EPITAXIAL-GROWTH RATES FOR INXGA1-XAS AND INXAL1-XAS
CHIKA, S
KATO, H
NAKAYAMA, M
SANO, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (09): : 1441 - 1442
[5] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &
[6] DUDLEY S, COMMUNICATION
[7] EVANS KR, IN PRESS J CRYST GRO
[8] INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE
FOXON, CT
JOYCE, BA
[J]. SURFACE SCIENCE, 1975, 50 (02) : 434 - 450
[9] FOXON CT, IN PRESS J CRYST GRO
[10] FOXON CT, 1986, HETEROJUNCTIONS SEMI, P216