A STUDY OF STRAIN-RELATED EFFECTS IN THE MOLECULAR-BEAM EPITAXY GROWTH OF INXGA1-XAS ON GAAS USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION

被引：39

作者：

BERGER, PR ^{[1
]}

CHANG, K ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

SINGH, J ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT MAT SCI & ENGN,ANN ARBOR,MI 48109

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583704

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1162 / 1166

页数：5

共 19 条

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