ROLE OF SURFACE KINETICS AND INTERRUPTED GROWTH DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF NORMAL AND INVERTED GAAS/ALGAAS(100) INTERFACES - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY DYNAMICS STUDY

被引：85

作者：

MADHUKAR, A

LEE, TC

YEN, MY

CHEN, P

KIM, JY

GHAISAS, SV

NEWMAN, PG

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 12期

关键词：

D O I：

10.1063/1.95739

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1148 / 1150

页数：3

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