GROWTH OF HIGH-PURITY GAAS-LAYERS BY MOLECULAR-BEAM EPITAXY

[1] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703

[2] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803

[3] SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (07) : 645 - 650

[4] HWANG JCM, 1982, SOLID STATE TECHNOL, V25, P166

[5] FEEDBACK METHOD FOR INVESTIGATING CARRIER DISTRIBUTIONS IN SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (10) : 1103 - &

[6] HIGH-PURITY GAAS AND CR-DOPED GAAS EPITAXIAL LAYERS BY MBE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6413 - 6416

[7] ELECTRON TRANSPORT IN GAAS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08): : 2534 - &

[8] TEMKIN H, UNPUB APPL PHYS LETT

[9] Tuck B., 1979, I PHYS C SER, V45, P114

[10] van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1

[1] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703

[2] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803

[3] SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (07) : 645 - 650

[4] HWANG JCM, 1982, SOLID STATE TECHNOL, V25, P166

[5] FEEDBACK METHOD FOR INVESTIGATING CARRIER DISTRIBUTIONS IN SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (10) : 1103 - &

[6] HIGH-PURITY GAAS AND CR-DOPED GAAS EPITAXIAL LAYERS BY MBE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6413 - 6416

[7] ELECTRON TRANSPORT IN GAAS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08): : 2534 - &

[8] TEMKIN H, UNPUB APPL PHYS LETT

[9] Tuck B., 1979, I PHYS C SER, V45, P114

[10] van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1