KINETIC STUDIES OF GROWTH OF III-V COMPOUNDS USING MODULATED MOLECULAR-BEAM TECHNIQUES

被引：43

作者：

JOYCE, BA ^{[1
]}

FOXON, CT ^{[1
]}

机构：

[1] MULLARD RES LABS,REDHILL RH1 5HA,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 31卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(75)90121-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：122 / 129

页数：8

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[8] MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES [J].

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[9]

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[10] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J].

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JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) :1693-&

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