COMPARATIVE-STUDY OF THE GROWTH-PROCESSES OF GAAS, ALGAAS, INGAAS, AND INALAS LATTICE MATCHED AND NONLATTICE MATCHED SEMICONDUCTORS USING HIGH-ENERGY ELECTRON-DIFFRACTION

被引：36

作者：

BERGER, PR

BHATTACHARYA, PK

SINGH, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 08期

关键词：

D O I：

10.1063/1.337880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2856 / 2860

页数：5

相关论文

共 9 条

[1] ARTHUR JR, 1977, SURF SCI, V64, P293
[2] KINETIC STUDIES OF GROWTH OF III-V COMPOUNDS USING MODULATED MOLECULAR-BEAM TECHNIQUES
JOYCE, BA
FOXON, CT
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 122 - 129
[3] DETERMINATION OF THE MICROSCOPIC QUALITY OF INGAAS-INALAS INTERFACES BY PHOTOLUMINESCENCE - ROLE OF INTERRUPTED MOLECULAR-BEAM EPITAXIAL-GROWTH
JUANG, FY
BHATTACHARYA, PK
SINGH, J
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (04) : 290 - 292
[4] ROLE OF SURFACE KINETICS AND INTERRUPTED GROWTH DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF NORMAL AND INVERTED GAAS/ALGAAS(100) INTERFACES - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY DYNAMICS STUDY
MADHUKAR, A
LEE, TC
YEN, MY
CHEN, P
KIM, JY
GHAISAS, SV
NEWMAN, PG
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1148 - 1150
[5] DYNAMIC RHEED OBSERVATIONS OF THE MBE GROWTH OF GAAS - SUBSTRATE-TEMPERATURE AND BEAM AZIMUTH EFFECTS
NEAVE, JH
JOYCE, BA
DOBSON, PJ
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03): : 179 - 184
[6] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS
NEAVE, JH
DOBSON, PJ
JOYCE, BA
ZHANG, J
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 100 - 102
[7] THEORETICAL INVESTIGATIONS OF THE NATURE OF THE NORMAL AND INVERTED GAAS-ALGAAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
SINGH, J
BAJAJ, KK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 576 - 581
[8] A STUDY OF NOVEL GROWTH APPROACHES TO INFLUENCE THE GROWTH-MECHANISM AND INTERFACE QUALITY IN HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
SINGH, J
DUDLEY, S
BAJAJ, KK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 878 - 883
[9] DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE
VANHOVE, JM
LENT, CS
PUKITE, PR
COHEN, PI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 741 - 746