A STUDY OF NOVEL GROWTH APPROACHES TO INFLUENCE THE GROWTH-MECHANISM AND INTERFACE QUALITY IN HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：29

作者：

SINGH, J ^{[1
]}

DUDLEY, S ^{[1
]}

BAJAJ, KK ^{[1
]}

机构：

[1] USAF,WRIGHT AERONAUT LABS,AADR,AVION LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.583530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：878 / 883

页数：6

共 19 条

[1]

ARTHUR J, 1974, SURF SCI, V43, P1999

[2]

ARTHUR JR, 1984, 5TH P MOL BEAM EP WO

[3]

BONFILS JF, 1981, P INT C METALORGANIC

[4] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES [J].

CHO, AY .

THIN SOLID FILMS, 1983, 100 (04) :291-317

[5]

CHO AY, 1975, PROGR SOLID STATE CH, V10, P175

[6] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

[7] INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J].

FOXON, CT ;

JOYCE, BA .

SURFACE SCIENCE, 1977, 64 (01) :293-304

[8]

GILMER GH, 1977, CRYSTAL GROWTH MATER

[9] KINETIC STUDIES OF GROWTH OF III-V COMPOUNDS USING MODULATED MOLECULAR-BEAM TECHNIQUES [J].

JOYCE, BA ;

FOXON, CT .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :122-129

[10] ROLE OF SURFACE KINETICS AND INTERRUPTED GROWTH DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF NORMAL AND INVERTED GAAS/ALGAAS(100) INTERFACES - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY DYNAMICS STUDY [J].

MADHUKAR, A ;

LEE, TC ;

YEN, MY ;

CHEN, P ;

KIM, JY ;

GHAISAS, SV ;

NEWMAN, PG .

APPLIED PHYSICS LETTERS, 1985, 46 (12) :1148-1150

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