THE NATURE OF MOLECULAR-BEAM EPITAXIAL-GROWTH EXAMINED VIA COMPUTER-SIMULATIONS

被引:145
作者
MADHUKAR, A
GHAISAS, SV
机构
[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089
[2] UNIV POONA,POONA 411007,MAHARASHTRA,INDIA
来源
CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 1988年 / 14卷 / 01期
关键词
D O I
10.1080/01611598808241266
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
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页码:1 / 130
页数:130
相关论文
共 147 条
[1]   STUDY OF GROWTH-KINETICS AND DOPING OF SEMICONDUCTOR-FILMS BY THE METHOD OF COMPUTER-SIMULATION [J].
ALEKSANDROV, LN ;
KOGAN, AN ;
DYAKONOVA, VI .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 61 (02) :381-388
[2]   STUDY OF EPITAXIAL-GROWTH OF DIAMOND-LIKE SEMICONDUCTOR-FILMS BY COMPUTER-SIMULATION [J].
ALEKSANDROV, LN ;
KOGAN, AN ;
DYAKONOVA, VI ;
TROSTINA, NP .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01) :237-243
[3]  
ALEKSANDROV LN, 1980, IZV VUZOV FIZ, V12, P67
[4]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[5]  
[Anonymous], Z PHYS CHEM
[6]   VELOCITY DISTRIBUTIONS OF AS2 AND AS4 SCATTERED FROM GAAS [J].
ARTHUR, JR ;
BROWN, TR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :200-203
[8]   INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J].
ARTHUR, JR .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :4032-&
[9]   SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].
ARTHUR, JR .
SURFACE SCIENCE, 1974, 43 (02) :449-461
[10]   Granulation, Phase Change, and Microstructure - Kinetics of Phase Change. III [J].
Avrami, M .
JOURNAL OF CHEMICAL PHYSICS, 1941, 9 (02) :177-184