STUDY OF HG VACANCIES IN (HG,CD)TE AFTER THM GROWTH AND POSTGROWTH ANNEALING BY POSITRON-ANNIHILATION

被引：34

作者：

KRAUSE, R ^{[1
]}

KLIMAKOW, A ^{[1
]}

KIESSLING, FM ^{[1
]}

POLITY, A ^{[1
]}

GILLE, P ^{[1
]}

SCHENK, M ^{[1
]}

机构：

[1] HUMBOLDT UNIV,SEKT PHYS,O-1040 BERLIN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)91026-M

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Positron lifetime measurements have been performed to study vacancy defects in Hg0.78Cd0.22Te. Post-growth annealing under various Hg vapour pressure conditions have been used to create a well-defined number of Hg vacancies. The sensitivity range of the positron annihilation method was found to be 1015 < cHgvac<1018 cm-3. The obtained experience has been used to investigate THM-grown single crystals. The measured longitudinal and radial dependence of the vacancy concentration can be explained by the temperature profile in the grown (Hg,Cd)Te ingots. © 1989.

引用

页码：512 / 516

页数：5

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