THE EXISTENCE REGION OF THE HG0.8CD0.2TE PHASE FIELD

[1] [Anonymous], COMMUNICATION

[2] BECHDOLT RW, 1977, THESIS MIT CAMBRIDGE

[3] OPTIMIZATION OF ISOTHERMAL GROWTH OF HGCDTE LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1103 - 1105

[4] CHEN JS, 1984 WORKSH PHYS CHE

[5] HENRY PS, 1939, P ROY SOC LONDON, V171, P291

[6] PRECIPITATION OF TELLURIUM IN (HG,CD)TE ALLOYS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (06) : 931 - 945

[7] THE EFFECT OF LOW-TEMPERATURE ANNEALING ON DEFECTS, IMPURITIES, AND ELECTRICAL-PROPERTIES OF (HG,CD)TE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 143 - 149

[8] SCHAAKE HF, UNPUB

[9] EFFECT OF ANNEALING TEMPERATURE ON CARRIER CONCENTRATION OF HG0.6CD0.4TE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) : 65 - 81

[10] PARTIAL PRESSURES OVER HGTE-CDTE SOLID-SOLUTIONS .1. CALIBRATION EXPERIMENTS AND RESULTS FOR 41.6 MOLE PERCENT CDTE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) : 438 - 451

[1] [Anonymous], COMMUNICATION

[2] BECHDOLT RW, 1977, THESIS MIT CAMBRIDGE

[3] OPTIMIZATION OF ISOTHERMAL GROWTH OF HGCDTE LAYERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1103 - 1105

[4] CHEN JS, 1984 WORKSH PHYS CHE

[5] HENRY PS, 1939, P ROY SOC LONDON, V171, P291

[6] PRECIPITATION OF TELLURIUM IN (HG,CD)TE ALLOYS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (06) : 931 - 945

[7] THE EFFECT OF LOW-TEMPERATURE ANNEALING ON DEFECTS, IMPURITIES, AND ELECTRICAL-PROPERTIES OF (HG,CD)TE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 143 - 149

[8] SCHAAKE HF, UNPUB

[9] EFFECT OF ANNEALING TEMPERATURE ON CARRIER CONCENTRATION OF HG0.6CD0.4TE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) : 65 - 81

[10] PARTIAL PRESSURES OVER HGTE-CDTE SOLID-SOLUTIONS .1. CALIBRATION EXPERIMENTS AND RESULTS FOR 41.6 MOLE PERCENT CDTE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) : 438 - 451