THE EFFECT OF LOW-TEMPERATURE ANNEALING ON DEFECTS, IMPURITIES, AND ELECTRICAL-PROPERTIES OF (HG,CD)TE

被引：82

作者：

SCHAAKE, HF

TREGILGAS, JH

BECK, JD

KINCH, MA

GNADE, BE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.573186

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：143 / 149

页数：7

共 20 条

[1]

BECK JD, 1983, UNPUB ELECTRONIC MAT

[2] DEFECT ANALYSIS OF (HG0.6CD0.4)1-YTEY [J].

BREBRICK, RF ;

SCHWARTZ, JP .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) :485-497

[3] DIFFUSION IN CDHG1-XTE AND RELATED MATERIALS [J].

BROWN, M ;

WILLOUGHBY, AFW .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :27-39

[4] THE BEHAVIOR OF SELECTED IMPURITIES IN CDXHG1-XTE [J].

CAPPER, P .

JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) :280-299

[5]

CARLSLAW HS, 1959, CONDUCTION HEAT SOLI, P92

[6] AN AXIAL-EMISSION MAGNETRON IONIZATION GAUGE [J].

CHEN, JZ ;

SUEN, CD ;

KUO, YH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :14-17

[7]

GORSHKOV AV, 1982, IZV ADAK NAUK UZ FMN, V6, P97

[8] DOPING PROPERTIES OF SELECTED IMPURITIES IN HG1-XCDXTE [J].

JOHNSON, ES ;

SCHMIT, JL .

JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (01) :25-38

[9] EFFECTS OF ANNEALING ON THE ELECTRICAL-PROPERTIES OF CDXHG1-XTE [J].

JONES, CL ;

QUELCH, MJT ;

CAPPER, P ;

GOSNEY, JJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :9080-9092

[10]

REYNOLDS RA, 1970, PHYSICS SEMIMETALS N, P511

← 1 2 →