OPTIMIZATION OF ISOTHERMAL GROWTH OF HGCDTE LAYERS

[1] CDTE-HGTE HETEROSTRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) : 233 - &

[2] MERCURY PRESSURE OVER HGTE AND HGCDTE IN A CLOSED ISOTHERMAL SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) : 4244 - 4250

[3] Becla P., 1977, Materials Science, V3, P27

[4] A MODIFIED APPROACH TO ISOTHERMAL GROWTH OF ULTRAHIGH QUALITY HGCDTE FOR INFRARED APPLICATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1171 - 1173

[5] CROISSANCE EPITAXIQUE DE COMPOSES SEMICONDUCTEURS PAR EVAPORATION-DIFFUSION EN REGIME ISOTHERME [J]. REVUE DE PHYSIQUE APPLIQUEE, 1966, 1 (01): : 11 - &

[6] COHENSOLAL G, 1965, CR HEBD ACAD SCI, V261, P931

[7] MARFAING Y, 1967, J PHYS CHEM SOLIDS S, V1, P549

[8] MARFAING Y, 1969, Patent No. 3472682

[9] NGUYENDAY T, 1980, TECHNICAL DIGEST 198

[10] EFFECT OF ANNEALING TEMPERATURE ON CARRIER CONCENTRATION OF HG0.6CD0.4TE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) : 65 - 81

[1] CDTE-HGTE HETEROSTRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) : 233 - &

[2] MERCURY PRESSURE OVER HGTE AND HGCDTE IN A CLOSED ISOTHERMAL SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) : 4244 - 4250

[3] Becla P., 1977, Materials Science, V3, P27

[4] A MODIFIED APPROACH TO ISOTHERMAL GROWTH OF ULTRAHIGH QUALITY HGCDTE FOR INFRARED APPLICATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) : 1171 - 1173

[5] CROISSANCE EPITAXIQUE DE COMPOSES SEMICONDUCTEURS PAR EVAPORATION-DIFFUSION EN REGIME ISOTHERME [J]. REVUE DE PHYSIQUE APPLIQUEE, 1966, 1 (01): : 11 - &

[6] COHENSOLAL G, 1965, CR HEBD ACAD SCI, V261, P931

[7] MARFAING Y, 1967, J PHYS CHEM SOLIDS S, V1, P549

[8] MARFAING Y, 1969, Patent No. 3472682

[9] NGUYENDAY T, 1980, TECHNICAL DIGEST 198

[10] EFFECT OF ANNEALING TEMPERATURE ON CARRIER CONCENTRATION OF HG0.6CD0.4TE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) : 65 - 81