TENSILE-STRAINED QW STRUCTURE FOR LOW-THRESHOLD OPERATION OF SHORT-WAVELENGTH ALGALNP LDS EMITTING IN THE 630-NM BAND

被引：10

作者：

TANAKA, T

YANAGISAWA, H

YANO, S

MINAGAWA, S

机构：

[1] Central Research Laboratory, Hitachi Ltd., Tokyo 185

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 07期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19930406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The amount of tensile strain introduced into QWs and the optimum QW structure are evaluated for low-threshold operation of AlGaInP LDs in the wavelength range 630-640 nm. Very low threshold current of 32 mA under CW operation at 20-degrees-C is achieved in an index-guided SQW LD emitting at 632 nm.

引用

收藏

页码：606 / 607

页数：2

相关论文

共 8 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].

ADAMS, AR .

ELECTRONICS LETTERS, 1986, 22 (05) :249-250

[2] LOW THRESHOLD, 633 NM, SINGLE TENSILE-STRAINED QUANTUM-WELL GA0.6IN0.4P/(ALXGA1-X)0.5IN0.5P LASER [J].

BOUR, DP ;

TREAT, DW ;

THORNTON, RL ;

PAOLI, TL ;

BRINGANS, RD ;

KRUSOR, BS ;

GEELS, RS ;

WELCH, DF ;

WANG, TY .

APPLIED PHYSICS LETTERS, 1992, 60 (16) :1927-1929

[3] HIGH-PERFORMANCE 634NM INGAP/INGAALP STRAINED QUANTUM-WELL LASERS [J].

CHANGHASNAIN, CJ ;

BHAT, R ;

KOZA, MA .

ELECTRONICS LETTERS, 1991, 27 (17) :1553-1555

[4] TRANSVERSE-MODE STABILIZED 630 NM-BAND ALGALNP STRAINED MULTIQUANTUM-WELL LASER-DIODES GROWN ON MISORIENTED SUBSTRATES [J].

HONDA, S ;

HAMADA, H ;

SHONO, M ;

HIROYAMA, R ;

YODOSHI, K ;

YAMAGUCHI, T .

ELECTRONICS LETTERS, 1992, 28 (14) :1365-1367

[5] IMPROVED PERFORMANCE DUE TO SUPPRESSION OF SPONTANEOUS EMISSION IN TENSILE-STRAIN SEMICONDUCTOR-LASERS [J].

OREILLY, EP ;

JONES, G ;

GHITI, A ;

ADAMS, AR .

ELECTRONICS LETTERS, 1991, 27 (16) :1417-1419

[6]

TANAKAT, 1993, ELECTRON LETT, V29, P24

[7] LOW THRESHOLD CURRENT LASER EMITTING AT 637 NM [J].

WELCH, DF ;

WANG, T ;

SCIFRES, DR .

ELECTRONICS LETTERS, 1991, 27 (09) :693-695

[8]

YABLONOVITCH E, 1988, J LIGHTWAVE TECHNOL, V6, P1292