TRANSVERSE-MODE STABILIZED 630 NM-BAND ALGALNP STRAINED MULTIQUANTUM-WELL LASER-DIODES GROWN ON MISORIENTED SUBSTRATES

被引：8

作者：

HONDA, S

HAMADA, H

SHONO, M

HIROYAMA, R

YODOSHI, K

YAMAGUCHI, T

机构：

[1] Semiconductor Research Center, Sanyo Electric. Co., Ltd., Hirakata, Osaka, 573

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 14期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920868

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transverse-mode stabilised AlGaInP (lambda(L) = 638 nm) compressively strained multiquantum-well laser diodes have been successfully fabricated by MOCVD using (100) GaAs substrates with a misorientation of 7-degrees towards the (011) direction. The maximum CW operation temperature was 60-degrees-C, which is the highest value for 630 nm-band AlGaInP lasers so far. These lasers operated for more than 2000 h without significant degradation under 3 mW at 40-degrees-C.

引用

页码：1365 / 1367

页数：3

共 8 条

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