LOW THRESHOLD CURRENT-DENSITY (760 A/CM2) AND HIGH-POWER (45 MW) OPERATION OF STRAINED GA0.42IN0.58P MULTIQUANTUM WELL LASER-DIODES EMITTING AT 632 NM

被引：36

作者：

VALSTER, A

VANDERPOEL, CJ

FINKE, MN

BOERMANS, MJB

机构：

[1] Philips Optoelectronics Centre, 5600 JA Eindhoven

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 02期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920089

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A record low threshold current density of 760 A/cm2 has been obtained for a compressively strained multiquantum well laser emitting at 632 nm. Narrow stripe gain guided lasers show a maximum continuous output power of 45 mW with normally passivated mirrors. Stable laser operation over more than 3000 h at 40-degrees-C and 2 mW output power is reported for the first time.

引用

页码：144 / 145

页数：2

共 10 条

[1] HIGH-PERFORMANCE 634NM INGAP/INGAALP STRAINED QUANTUM-WELL LASERS
CHANGHASNAIN, CJ
BHAT, R
KOZA, MA
[J]. ELECTRONICS LETTERS, 1991, 27 (17) : 1553 - 1555
[2] HIGH-POWER OPERATION OF 630 NM-BAND TRANSVERSE-MODE STABILIZED ALGAINP LASER-DIODES WITH CURRENT-BLOCKING REGION NEAR FACETS
HAMADA, H
SHONO, M
HONDA, S
HIROYAMA, R
MATSUKAWA, K
YODOSHI, K
YAMAGUCHI, T
[J]. ELECTRONICS LETTERS, 1991, 27 (08) : 661 - 662
[3] ALGAINP VISIBLE LASER-DIODES GROWN ON MISORIENTED SUBSTRATES
HAMADA, H
SHONO, M
HONDA, S
HIROYAMA, R
YODOSHI, K
YAMAGUCHI, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1483 - 1490
[4] ITAYA K, 1990, 22ND C SOL STAT DEV, P565
[5] KATSUYAMA T, 1991, 23RD C SOL STAT DEV, P117
[6] 632.7 NM CW OPERATION (20-DEGREES-C) OF ALGAINP VISIBLE LASER-DIODES FABRICATED ON (001) 6-DEGREES OFF TOWARD [110] GAAS SUBSTRATE
KOBAYASHI, K
UENO, Y
HOTTA, H
GOMYO, A
TADA, K
HARA, K
YUASA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (09): : L1669 - L1671
[7] VALSTER A, 1990, PHILIPS J RES, V45, P267
[8] HIGH-QUALITY ALXGA1-X-YINYP ALLOYS GROWN BY MOVPE ON (311)B GAAS SUBSTRATES
VALSTER, A
LIEDENBAUM, CTHF
FINKE, MN
SEVERENS, ALG
BOERMANS, MJB
VANDENHOUDT, DEW
BULLELIEUWMA, CWT
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 403 - 409
[9] VALSTER A, 1990, 12TH IEEE INT SEM LA
[10] LOW THRESHOLD CURRENT LASER EMITTING AT 637 NM
WELCH, DF
WANG, T
SCIFRES, DR
[J]. ELECTRONICS LETTERS, 1991, 27 (09) : 693 - 695

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