HIGH-POWER OPERATION OF 630 NM-BAND TRANSVERSE-MODE STABILIZED ALGAINP LASER-DIODES WITH CURRENT-BLOCKING REGION NEAR FACETS

被引：18

作者：

HAMADA, H

SHONO, M

HONDA, S

HIROYAMA, R

MATSUKAWA, K

YODOSHI, K

YAMAGUCHI, T

机构：

[1] Semiconductor Research Center, Sanyo Electric. Co., Ltd., Hirakata, Osaka, 573

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 08期

关键词：

SEMICONDUCTOR LASERS; STABILITY;

D O I：

10.1049/el:19910414

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power type AlGaInP laser diodes (lambda-L = 635 nm) with the current-blocking region near the facets have been successfully fabricated for the first time, by MOCVD using the (100) GaAs substrates with a misorientation of 5-degrees towards the (011) direction. The maximum continuous wave output power was achieved with about 33 mW at 20-degrees-C. Fundamental transverse-mode operation was obtained up to 20 mW.

引用

页码：661 / 662

页数：2

共 7 条

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