632.7 NM CW OPERATION (20-DEGREES-C) OF ALGAINP VISIBLE LASER-DIODES FABRICATED ON (001) 6-DEGREES OFF TOWARD [110] GAAS SUBSTRATE

被引：46

作者：

KOBAYASHI, K

UENO, Y

HOTTA, H

GOMYO, A

TADA, K

HARA, K

YUASA, T

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation, Miyamae-ku, 213, 1-1 Miyazaki, 4-chome, Kawasaki

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 09期

关键词：

AIGalnP; Continuous wave operation; MOVPE; Natural superlattice; Off-angle-substrate; Visible laser diode;

D O I：

10.1143/JJAP.29.L1669

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

632.7 nm continuous wave operation was achieved at 20°C, by an AlGaInP visible laser diode (LD) with an AlGaInP quaternary active layer fabricated on a (001) GaAs substrate with a misorientation angle of 6° toward the [110] direction. The epitaxial layers for the laser structure are grown by metalorganic vapor phase epitaxy. The lasing wavelength is almost the same as that for He-Ne lasers. Lasing wavelengths for the LDs were also compared with wavelengths for those fabricated on an exact (001) orientation substrate. © 1990 The Japan Society of Applied Physics.

引用

页码：L1669 / L1671

页数：3

共 12 条

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