GAINP/ALGAINP DOUBLE-HETEROSTRUCTURE LASER GROWN ON A (111)B-ORIENTED GAAS SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：25

作者：

IKEDA, M

MORITA, E

TODA, A

YAMAMOTO, T

KANEKO, K

机构：

[1] Sony Corp, Japan

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 17期

关键词：

D O I：

10.1049/el:19880742

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1094 / 1095

页数：2

共 6 条

[1] CHEMICAL ORDERING IN GAXIN1-XP SEMICONDUCTOR ALLOY GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

BELLON, P ;

CHEVALIER, JP ;

MARTIN, GP ;

DUPONTNIVET, E ;

THIEBAUT, C ;

ANDRE, JP .

APPLIED PHYSICS LETTERS, 1988, 52 (07) :567-569

[2] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY [J].

GOMYO, A ;

SUZUKI, T ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

YUASA, T .

APPLIED PHYSICS LETTERS, 1987, 50 (11) :673-675

[3] ALGAINP VISIBLE SEMICONDUCTOR-LASERS [J].

IKEDA, M ;

NAKANO, K ;

TODA, A ;

MORI, Y ;

KOJIMA, C .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 :101-105

[4] 680-NM BAND GAINP/ALGAINP TAPERED STRIPE LASER [J].

IKEDA, M ;

SATO, H ;

OHATA, T ;

NAKANO, K ;

TODA, A ;

KUMAGAI, O ;

KOJIMA, C .

APPLIED PHYSICS LETTERS, 1987, 51 (20) :1572-1573

[5] ORDERED STRUCTURE IN OMVPE-GROWN GA0.5IN0.5P [J].

KONDOW, M ;

KAKIBAYASHI, H ;

MINAGAWA, S .

JOURNAL OF CRYSTAL GROWTH, 1988, 88 (02) :291-296

[6] ATOMIC-STRUCTURE OF ORDERED INGAP CRYSTALS GROWN ON (001)GAAS SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

UEDA, O ;

TAKIKAWA, M ;

KOMENO, J ;

UMEBU, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (11) :L1824-L1827

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