ORDERED STRUCTURE IN OMVPE-GROWN GA0.5IN0.5P

被引:109
作者
KONDOW, M
KAKIBAYASHI, H
MINAGAWA, S
机构
[1] Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn
关键词
D O I
10.1016/0022-0248(88)90285-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
8
引用
收藏
页码:291 / 296
页数:6
相关论文
共 8 条
  • [1] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
    GOMYO, A
    KOBAYASHI, K
    KAWATA, S
    HINO, I
    SUZUKI, T
    YUASA, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373
  • [2] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
    GOMYO, A
    SUZUKI, T
    KOBAYASHI, K
    KAWATA, S
    HINO, I
    YUASA, T
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 673 - 675
  • [3] MOCVD GROWTH OF ALGAINP AT ATMOSPHERIC-PRESSURE USING TRIETHYLMETALS AND PHOSPHINE
    IKEDA, M
    NAKANO, K
    MORI, Y
    KANEKO, K
    WATANABE, N
    [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 380 - 385
  • [4] IKEDA M, 1987, IEICE OQE8744 TECH R, P105
  • [5] KONDOW M, UNPUB J APPL PHYS
  • [6] GROWTH OF HIGH-QUALITY INGAALP EPILAYERS BY MOCVD USING METHYL METALORGANICS AND THEIR APPLICATION TO VISIBLE SEMICONDUCTOR-LASERS
    OHBA, Y
    ISHIKAWA, M
    SUGAWARA, H
    YAMAMOTO, M
    NAKANISI, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 374 - 379
  • [7] ATOMIC-STRUCTURE AND ORDERING IN SEMICONDUCTOR ALLOYS
    SRIVASTAVA, GP
    MARTINS, JL
    ZUNGER, A
    [J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2561 - 2564
  • [8] SUZUKI T, 1987, IECE OQE8745 TECH RE, P109