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ORDERED STRUCTURE IN OMVPE-GROWN GA0.5IN0.5P
被引:109
作者
:
KONDOW, M
论文数:
0
引用数:
0
h-index:
0
机构:
Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn
KONDOW, M
KAKIBAYASHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn
KAKIBAYASHI, H
MINAGAWA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn
MINAGAWA, S
机构
:
[1]
Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1988年
/ 88卷
/ 02期
关键词
:
D O I
:
10.1016/0022-0248(88)90285-0
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
8
引用
收藏
页码:291 / 296
页数:6
相关论文
共 8 条
[1]
STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
GOMYO, A
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KOBAYASHI, K
KAWATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KAWATA, S
HINO, I
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
HINO, I
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
SUZUKI, T
YUASA, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
YUASA, T
[J].
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
: 367
-
373
[2]
EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
GOMYO, A
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
SUZUKI, T
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KOBAYASHI, K
KAWATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KAWATA, S
HINO, I
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
HINO, I
YUASA, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
YUASA, T
[J].
APPLIED PHYSICS LETTERS,
1987,
50
(11)
: 673
-
675
[3]
MOCVD GROWTH OF ALGAINP AT ATMOSPHERIC-PRESSURE USING TRIETHYLMETALS AND PHOSPHINE
IKEDA, M
论文数:
0
引用数:
0
h-index:
0
IKEDA, M
NAKANO, K
论文数:
0
引用数:
0
h-index:
0
NAKANO, K
MORI, Y
论文数:
0
引用数:
0
h-index:
0
MORI, Y
KANEKO, K
论文数:
0
引用数:
0
h-index:
0
KANEKO, K
WATANABE, N
论文数:
0
引用数:
0
h-index:
0
WATANABE, N
[J].
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
: 380
-
385
[4]
IKEDA M, 1987, IEICE OQE8744 TECH R, P105
[5]
KONDOW M, UNPUB J APPL PHYS
[6]
GROWTH OF HIGH-QUALITY INGAALP EPILAYERS BY MOCVD USING METHYL METALORGANICS AND THEIR APPLICATION TO VISIBLE SEMICONDUCTOR-LASERS
OHBA, Y
论文数:
0
引用数:
0
h-index:
0
OHBA, Y
ISHIKAWA, M
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, M
SUGAWARA, H
论文数:
0
引用数:
0
h-index:
0
SUGAWARA, H
YAMAMOTO, M
论文数:
0
引用数:
0
h-index:
0
YAMAMOTO, M
NAKANISI, T
论文数:
0
引用数:
0
h-index:
0
NAKANISI, T
[J].
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
: 374
-
379
[7]
ATOMIC-STRUCTURE AND ORDERING IN SEMICONDUCTOR ALLOYS
SRIVASTAVA, GP
论文数:
0
引用数:
0
h-index:
0
机构:
SOLAR ENERGY RES INST,GOLDEN,CO 80401
SOLAR ENERGY RES INST,GOLDEN,CO 80401
SRIVASTAVA, GP
MARTINS, JL
论文数:
0
引用数:
0
h-index:
0
机构:
SOLAR ENERGY RES INST,GOLDEN,CO 80401
SOLAR ENERGY RES INST,GOLDEN,CO 80401
MARTINS, JL
ZUNGER, A
论文数:
0
引用数:
0
h-index:
0
机构:
SOLAR ENERGY RES INST,GOLDEN,CO 80401
SOLAR ENERGY RES INST,GOLDEN,CO 80401
ZUNGER, A
[J].
PHYSICAL REVIEW B,
1985,
31
(04):
: 2561
-
2564
[8]
SUZUKI T, 1987, IECE OQE8745 TECH RE, P109
←
1
→
共 8 条
[1]
STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
GOMYO, A
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KOBAYASHI, K
KAWATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KAWATA, S
HINO, I
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
HINO, I
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
SUZUKI, T
YUASA, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
YUASA, T
[J].
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
: 367
-
373
[2]
EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
GOMYO, A
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
GOMYO, A
SUZUKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
SUZUKI, T
KOBAYASHI, K
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KOBAYASHI, K
KAWATA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
KAWATA, S
HINO, I
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
HINO, I
YUASA, T
论文数:
0
引用数:
0
h-index:
0
机构:
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
YUASA, T
[J].
APPLIED PHYSICS LETTERS,
1987,
50
(11)
: 673
-
675
[3]
MOCVD GROWTH OF ALGAINP AT ATMOSPHERIC-PRESSURE USING TRIETHYLMETALS AND PHOSPHINE
IKEDA, M
论文数:
0
引用数:
0
h-index:
0
IKEDA, M
NAKANO, K
论文数:
0
引用数:
0
h-index:
0
NAKANO, K
MORI, Y
论文数:
0
引用数:
0
h-index:
0
MORI, Y
KANEKO, K
论文数:
0
引用数:
0
h-index:
0
KANEKO, K
WATANABE, N
论文数:
0
引用数:
0
h-index:
0
WATANABE, N
[J].
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
: 380
-
385
[4]
IKEDA M, 1987, IEICE OQE8744 TECH R, P105
[5]
KONDOW M, UNPUB J APPL PHYS
[6]
GROWTH OF HIGH-QUALITY INGAALP EPILAYERS BY MOCVD USING METHYL METALORGANICS AND THEIR APPLICATION TO VISIBLE SEMICONDUCTOR-LASERS
OHBA, Y
论文数:
0
引用数:
0
h-index:
0
OHBA, Y
ISHIKAWA, M
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, M
SUGAWARA, H
论文数:
0
引用数:
0
h-index:
0
SUGAWARA, H
YAMAMOTO, M
论文数:
0
引用数:
0
h-index:
0
YAMAMOTO, M
NAKANISI, T
论文数:
0
引用数:
0
h-index:
0
NAKANISI, T
[J].
JOURNAL OF CRYSTAL GROWTH,
1986,
77
(1-3)
: 374
-
379
[7]
ATOMIC-STRUCTURE AND ORDERING IN SEMICONDUCTOR ALLOYS
SRIVASTAVA, GP
论文数:
0
引用数:
0
h-index:
0
机构:
SOLAR ENERGY RES INST,GOLDEN,CO 80401
SOLAR ENERGY RES INST,GOLDEN,CO 80401
SRIVASTAVA, GP
MARTINS, JL
论文数:
0
引用数:
0
h-index:
0
机构:
SOLAR ENERGY RES INST,GOLDEN,CO 80401
SOLAR ENERGY RES INST,GOLDEN,CO 80401
MARTINS, JL
ZUNGER, A
论文数:
0
引用数:
0
h-index:
0
机构:
SOLAR ENERGY RES INST,GOLDEN,CO 80401
SOLAR ENERGY RES INST,GOLDEN,CO 80401
ZUNGER, A
[J].
PHYSICAL REVIEW B,
1985,
31
(04):
: 2561
-
2564
[8]
SUZUKI T, 1987, IECE OQE8745 TECH RE, P109
←
1
→