GROWTH OF HIGH-QUALITY INGAALP EPILAYERS BY MOCVD USING METHYL METALORGANICS AND THEIR APPLICATION TO VISIBLE SEMICONDUCTOR-LASERS

被引：142

作者：

OHBA, Y

ISHIKAWA, M

SUGAWARA, H

YAMAMOTO, M

NAKANISI, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90326-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：374 / 379

页数：6

相关论文

共 13 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP VISIBLE LASER-DIODES OPERATING AT 0.66-0.68 MU-M AT ROOM TEMPERATURES
ASAHI, H
KAWAMURA, Y
NAGAI, H
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6958 - 6964
[2] MOCVD GROWTH OF (ALXGA1-X)YIN1-YP AND DOUBLE HETEROSTRUCTURES FOR VISIBLE-LIGHT LASERS
HINO, I
SUZUKI, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 483 - 489
[3] OMVPE GROWTH OF GAINP
HSU, CC
COHEN, RM
STRINGFELLOW, GB
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) : 648 - 650
[4] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF AN ALGAINP MESA STRIPE LASER
IKEDA, M
NAKANO, K
MORI, Y
KANEKO, K
WATANABE, N
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (02) : 89 - 91
[5] ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
ISHIKAWA, M
OHBA, Y
SUGAWARA, H
YAMAMOTO, M
NAKANISI, T
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (03) : 207 - 208
[6] ISHIKAWA M, 1985, ELECTRON LETT, V1, P1084
[7] ELECTRICAL-PROPERTIES OF ZN-DOPED IN1-XGAXP
KATO, T
MATSUMOTO, T
ISHIDA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) : 2367 - 2375
[8] 661.7 NM ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE LASERS WITH ALUMINUM-CONTAINING QUATERNARY ACTIVE LAYER
KOBAYASHI, K
KAWATA, S
GOMYO, A
HINO, I
SUZUKI, T
[J]. ELECTRONICS LETTERS, 1985, 21 (24) : 1162 - 1163
[9] OHBA Y, 1986, I PHYS C SER, V79
[10] IMPORTANCE OF LATTICE MISMATCH IN GROWTH OF GAXIN1-XP EPITAXIAL CRYSTALS
STRINGFELLOW, GB
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3455 - +