ELECTRICAL-PROPERTIES OF ZN-DOPED IN1-XGAXP

被引：24

作者：

KATO, T

MATSUMOTO, T

ISHIDA, T

机构：

[1] Department of Electronic Engineering, Yamanashi University, Kofu, 400, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 12期

关键词：

D O I：

10.1143/JJAP.19.2367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2367 / 2375

页数：9

共 46 条

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